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A model for failure in the contact system of a semiconductor device on temperature cycling

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Abstract

A physical model is proposed for the failure in a multilayer contact system for a semiconductor device on temperature cycling.

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Literature cited

  1. V. G. Doroshenko, M. B. Zaks, and Yu. V. Skokov, “Progressive thermal damage in multilayer strcutures,” in: Electrical Engineering Industry: Chemical and Physical Current Sources Series [in Russian], Issue 4 (55) (1977), pp. 9–11.

  2. A. M. Vasil'ev and A. P. Landsman, Semiconductor Photocells [in Russian], Sov. Radio, Moscow (1971).

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Authors
  1. L. V. Bereza
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  2. A. A. Dolgov
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  3. V. G. Doroshenko
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  4. V. M. Evdokimov
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  5. A. I. Elizarova
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  6. M. B. Zaks
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  7. Yu. V. Skokov
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Additional information

Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 44, No. 2, pp. 298–304, February, 1983.

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Bereza, L.V., Dolgov, A.A., Doroshenko, V.G. et al. A model for failure in the contact system of a semiconductor device on temperature cycling. Journal of Engineering Physics 44, 210–214 (1983). https://doi.org/10.1007/BF00826151

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  • DOI: https://doi.org/10.1007/BF00826151

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