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Electrical and photoelectric characteristics of A p-Si-n-CdS heterojunction

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Literature cited

  1. H. Okimura, M. Kawakami, and Y. Sakai, Japan. J. Appl. Phys.,6, 908 (1967).

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Authors and Affiliations

  1. N. G. Chernyshevskii Saratov State University, USSR

    A. G. Rokakh & N. M. Tsukerman

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  1. A. G. Rokakh
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  2. N. M. Tsukerman
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 10, pp. 145–146, October, 1971.

The authors are deeply grateful to V. F. Nazvanov for helpful advice during discussions of the results of the work.

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Rokakh, A.G., Tsukerman, N.M. Electrical and photoelectric characteristics of A p-Si-n-CdS heterojunction. Soviet Physics Journal 14, 1443–1444 (1971). https://doi.org/10.1007/BF00823901

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  • DOI: https://doi.org/10.1007/BF00823901

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