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Soviet Physics Journal

, Volume 8, Issue 1, pp 47–49 | Cite as

Voltage buildup in a semiconductor diode due to a DC forward current step

  • I. M. Muratov
  • K. M. Kul'kin
Article
  • 16 Downloads

Abstract

The authors discuss the potentials in the p-n junction and base of a planar diode produced by a current step from zero to I. Approximate equations are derived for the voltages at the start. It is assumed that the base region is of finite size.

Keywords

Base Region Finite Size Approximate Equation Current Step Semiconductor Diode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    I. M. Muratov and K. M. Kul'kin. Izv. VUZ. Fizika, no. 3, 179, 1963.Google Scholar
  2. 2.
    Yu. R. Nosov, Radiotekhnika i, 6, no. 2, 313, 1961.Google Scholar

Copyright information

© The Faraday Press, Inc. 1966

Authors and Affiliations

  • I. M. Muratov
    • 1
  • K. M. Kul'kin
    • 1
  1. 1.Udmurt Pedagogic InstituteUSSR

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