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Transients in thin-base semiconductor diodes

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Soviet Physics Journal Aims and scope

Abstract

Transients for thin-base diodes following a step in the forward bias or current are discussed. The recombination rate at an ohmićc contact is taken as arbitrary. The results enable this recombination rate to be determined, given the bulk lifetime of the minority carriers in the base.

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References

  1. Yu. F. Sokolov, Radiotekhnika i elektronika, vol. 8, no. 3, 1963.

  2. A. V. Lykov, Theory of Thermal Conductivity [in Russian], p. 355, 1952.

  3. A. V. Lykov, Theory of Thermal Conductivity [in Russian], p. 155, 1952; B. Van der Pohl and H. Bremmer, Operational Calculus [Russian translation], IL, p. 179, 1952.

  4. Yu. R. Nosov, Radiotekhnika i elektronika, vol. 6, no. 2, 1961.

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Authors and Affiliations

  1. Kuybyshev Siberian Technical Physics Institute, Tomsk State University, USSR

    V. I. Gaman

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  1. V. I. Gaman
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Additional information

I am indebted to V. A. Chaldyshev, A. P. Vyatkin, and A. A. Sirotkin for valuable advice and discussions.

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Gaman, V.I. Transients in thin-base semiconductor diodes. Soviet Physics Journal 8, 38–42 (1965). https://doi.org/10.1007/BF00823735

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  • DOI: https://doi.org/10.1007/BF00823735

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