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Migration polarization in dielectrics and semiconductors

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Abstract

It is shown that during migration polarization the relaxation time is governed by the carrier lifetime in the bound state, by the thickness of the layer through which the migration occurs, and by the drift velocity. An equation is found for ion migration by generalizing the equation for ion-relaxation polarization. Experimental data found by the Ioffe method on the ion mobility in Al2O3 are reported and compared with the mobilities obtained by the method of this paper, on the basis of the equation for the relaxation time. Migration polarization must be taken into account in analyzing the mechanism for the excess noise and certain cases of current oscillations in semiconductors, dielectric loss of a relaxation nature, relaxation phenomena in film-type active devices, etc.

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Authors and Affiliations

  1. Ryazan' Radio Engineering Institute, USSR

    P. T. Oreshkin, B. K. Starchenkov & L. P. Andreeva

Authors
  1. P. T. Oreshkin
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  2. B. K. Starchenkov
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  3. L. P. Andreeva
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 5, pp. 13–16, May, 1970.

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Oreshkin, P.T., Starchenkov, B.K. & Andreeva, L.P. Migration polarization in dielectrics and semiconductors. Soviet Physics Journal 13, 556–558 (1970). https://doi.org/10.1007/BF00823432

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  • DOI: https://doi.org/10.1007/BF00823432

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