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Measuring the thermal diffusivity of semiconductors by the light-pulse method

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Abstract

It is shown that the light-pulse method can be used for measuring the thermal diffusivity of semiconductors, if the photothermal effect is eliminated. The apparatus is described and the results of some measurements on various semiconductor materials are also shown.

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Abbreviations

α :

thermal diffusivity of the material

d:

thickness of the specimen

t1/2 :

time of reaching half the maximum temperature rise at the back surface

A:

dimensionless parameter, equal to 1.37 when the heat loss is negligible and tc is much longer than the pulse duration

tc :

characteristic time of temperature rise at the back surface

τ :

duration (width) of light pulse

m:

correction factor accounting for the thermal inertia of the instruments

δ :

response time of the instruments

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Authors and Affiliations

  1. Institute of Physics, Academy of Sciences of the AzerbSSR, Baku

    M. I. Aliev, R. É. Guseinov & D. G. Arasly

Authors
  1. M. I. Aliev
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  2. R. É. Guseinov
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  3. D. G. Arasly
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Additional information

Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 22, No. 6, pp. 1055–1059, June, 1972.

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Aliev, M.I., Guseinov, R.É. & Arasly, D.G. Measuring the thermal diffusivity of semiconductors by the light-pulse method. Journal of Engineering Physics 22, 732–735 (1972). https://doi.org/10.1007/BF00822981

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  • DOI: https://doi.org/10.1007/BF00822981

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