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Effect of anisotropic pressure on the parameters of silicon diodes

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Abstract

We analyze experimental data on the effect of external pressure on the following parameters of silicon alloyed diodes: charge capacitance of the p-n junction, lifetime of the minority charge carriers in the diode base, the rate of surface recombination on the base surface, and the reverse current.

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Authors and Affiliations

  1. Kuznetsov Siberian Physicotechnical Institute, USSR

    V. I. Gaman & V. F. Agafonnikov

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  1. V. I. Gaman
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  2. V. F. Agafonnikov
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Gaman, V.I., Agafonnikov, V.F. Effect of anisotropic pressure on the parameters of silicon diodes. Soviet Physics Journal 11, 27–30 (1968). https://doi.org/10.1007/BF00822462

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  • DOI: https://doi.org/10.1007/BF00822462

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