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Stress at alloyed metal contacts with silicon and gallium arsenide

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Abstract

An optical-polarization procedure is described for determining the residual stress at alloyed metal contacts on the primary crystallographic planes of semiconductors. Equations are derived for the birefringence and the angle between the stress and one of the optic axes for various directions of uniaxial stress in {100} and {110} planes. These equations can be used to calculate the mechanical stress in Td, O, and Oh cubic crystals (43 m, 432, and m3m). The stress has been determined experimentally for the cases of alloyed metal contacts on various crystallographic planes of silicon and gallium arsenide.

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Literature cited

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    A. M. Misik & A. P. Vyatkin

Authors
  1. A. M. Misik
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  2. A. P. Vyatkin
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No.3, pp. 7–12, March, 1971.

In conclusion the authors thank V. F. Konusov and V. I. Nikitenko for consultation and discussion of these results.

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Misik, A.M., Vyatkin, A.P. Stress at alloyed metal contacts with silicon and gallium arsenide. Soviet Physics Journal 14, 295–299 (1971). https://doi.org/10.1007/BF00822256

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  • DOI: https://doi.org/10.1007/BF00822256

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