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Evaluation of the effect of thermal coupling in a temperature-limited power transistor switch on the distribution of stationary power dissipation in the transistors

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Journal of engineering physics Aims and scope

Abstract

The average value and mean-square deviation of the dissipated power are obtained as a function of the thermal resistances of the couplings. Criteria are established for evaluating the optimum values of these resistances.

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Abbreviations

N:

number of transistors in the switch

Θi :

excess temperature of the i-th transistor

Θoi :

same, but the switch is not in the temperature-limited regime

Θcr i :

excess critical temperature of the posistor of the i-th transistor

Θ, and σΘ:

average value and meansquare deviation of the excess temperature of the transistors in the switch

Θcr and Θcr :

same for the posistors in the switch

Pi :

stationary dissipated power in the i-th transistor

Poi :

stationary dissipated power of the i-th transistor, stemming only from the electrical operational regime of the transistor and not depending on its thermal state

¯P and σP:

average value and mean-square deviation of the stationary dissipated power in the transistor

Ri :

thermal resistance of the i-th transistor when it is ideally thermally insulated from the rest of the transistors

Ro :

same, with Ri=const

rii :

thermal resistance of the i-th transistor taking into account the thermal coupling with the rest of the transistors

R:

same, with rii=const

rn :

same, with ideal thermal coupling between transistors

Rji :

thermal resistance of the coupling of the j-th transistor with the i-th transistor

Rc :

same, with Rji=const

kc=Ro/R:

coefficient of thermal coupling between transistors

Literature cited

  1. V. A. Belyakov and V. V. Togatov, “Analysis of electrical and thermal processes in temperature-limited transistors,” Inzh.-Fiz. Zh.,38, No. 3, 457–464 (1980).

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Authors and Affiliations

  1. Institute of Precision Mechanics and Optics, Leningrad

    V. A. Belyakov & V. V. Togatov

Authors
  1. V. A. Belyakov
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  2. V. V. Togatov
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Additional information

Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 39, No. 4, PP. 704–709, October, 1980.

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Belyakov, V.A., Togatov, V.V. Evaluation of the effect of thermal coupling in a temperature-limited power transistor switch on the distribution of stationary power dissipation in the transistors. Journal of Engineering Physics 39, 1125–1129 (1980). https://doi.org/10.1007/BF00822149

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  • DOI: https://doi.org/10.1007/BF00822149

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