The effect of an anisotropic pressure on the reverse currents and the lifetime of minority carriers in germanium diodes
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The effect of pressure on the reverse currents, the lifetime of minority carriers and the charging capacitance of fused germanium diodes is considered. The p-n junctions are arranged in the (111) crystallographic plane. It is established that the reverse current increases rapidly with increased pressure. The lifetime of minority carriers falls by a factor of 1.5 to 2 up to a pressure of 3 · 109 dyne/cm2 and the charging capacitance increases. Starting from a pressure of 3 · · 109 dyne/cm2 the lifetime of minority carriers increases and the charging capacitance is reduced to a particular constant value. A qualitative explanation of the dependence of τe, Cj and Irev is given.
KeywordsGermanium Current Increase Minority Carrier Crystallographic Plane Capacitance Increase
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