Skip to main content
Log in

Electric and photoelectric properties of the heterojunctions produced by germanium epitaxy on gallium arsenide substrates

  • Published:
Soviet Physics Journal Aims and scope

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Literature cited

  1. Zh. I. Alferov et al., Ukr. Fiz. Zh.,9, No. 6, 659 (1964).

    Google Scholar 

  2. Zh. I. Alferov et al.,2, No.4, 596 (1968).

  3. L. G. Lavrent'eva and I. S. Zakharov, in: Gallium Arsenide [in Russian], No. 2(1969).

  4. J. P. Donelly and A. G. Milnes, Proc. Inst. Electr. Eng.,113, No. 9, 1468–1476 (1966).

    Google Scholar 

  5. A. Lopez and R. L. Anderson, Solid State Electron.,7, 695 (1964).

    Google Scholar 

  6. R. L. Anderson, IBM J. Res. Developm.,4, No. 3, 283 (1960).

    Google Scholar 

  7. R. L. Anderson, Solid State Electron.,5, 341 (1962).

    Google Scholar 

  8. J. P. Donelly and A. G. Milnes, Solid State Electron.,9, 174 (1966).

    Google Scholar 

  9. L. J. van Ruyven, Solid State Electron.,8, No. 8, 639 (1965).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol.12, No. 3, pp. 113–117, March, 1969.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zakharov, I.S., Lavrent'eva, L.G., Rumyantsev, Y.M. et al. Electric and photoelectric properties of the heterojunctions produced by germanium epitaxy on gallium arsenide substrates. Soviet Physics Journal 12, 359–362 (1969). https://doi.org/10.1007/BF00821246

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00821246

Keywords

Navigation