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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol.12, No. 3, pp. 113–117, March, 1969.
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Zakharov, I.S., Lavrent'eva, L.G., Rumyantsev, Y.M. et al. Electric and photoelectric properties of the heterojunctions produced by germanium epitaxy on gallium arsenide substrates. Soviet Physics Journal 12, 359–362 (1969). https://doi.org/10.1007/BF00821246
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DOI: https://doi.org/10.1007/BF00821246