Abstract
Radioactive antimony was diffused into a surface layer of silicon. The basic diffusive annealing was carried out after irradiation with 2 · 104 μC/cm2 of 55 keV helium ions. The irradiation was found to significantly accelerate the diffusion. The results are described on the basis of a mechanism involving interstitial diffusion of antimony.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 8, pp. 27–30, August, 1969.
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Panteleev, V.A., Isavtseva, L.N. Diffusion of antimony into silicon from an ion-bombarded layer. Soviet Physics Journal 12, 995–997 (1969). https://doi.org/10.1007/BF00820928
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DOI: https://doi.org/10.1007/BF00820928