Applied Physics A

, Volume 32, Issue 4, pp 223–224 | Cite as

“0.75 eV killer centre” in red-emitting GaP LEDs

  • M. Anwar Butt
  • M. Zafar Iqbal
Contributed Papers


Dark transient capacitance measurements have been used to investigate the deeplevel content of red GaP LEDs. Thermal emission rate data is obtained and the 0.75 eV “killer” centre is identified from the signature.


71.55.Fr 85.60.Jb 85.30.De 


  1. 1.
    A.R. Peaker, B. Hamilton, D.R. Wight, I.D. Blenkinsop, W. Harding, R. Gibb: Gallium arsenide and Related compounds 1976, Inst. Phys. Conf. Ser. No. 33a, p. 326 (1977)Google Scholar
  2. 2.
    See for example: C.T. Sah, L. Forbes, L.L. Rosier, A.F. Tasch, Jr.: Solid State Electron,13, 759 (1970)Google Scholar
  3. 3.
    A. Mircea, D. Bois: Defects and radiation effects in semiconductors 1978, Inst. Phys. Conf. Ser. No. 46 p. 82 (1979)Google Scholar
  4. 4.
    R.M. Gibb, G.J. Rees, B.W. Thomas, B.L.H. Wilson, B. Hamilton, D.R. Wight, N.F. Mott: Philos. Mag.36, 1021 (1977)Google Scholar
  5. 5.
    B. Hamilton, A.R. Peaker, S. Bramwell, W. Harding, D.R. Wight: Appl. Phys. Lett.12, 702 (1975)Google Scholar
  6. 6.
    See, for example: G.L. Miller, D.V. Lang, L.C. Kimerling: Ann. Rev. Mater. Sci.7, 377 (1977)Google Scholar

Copyright information

© Springer-Verlag 1983

Authors and Affiliations

  • M. Anwar Butt
    • 1
  • M. Zafar Iqbal
    • 1
  1. 1.Department of PhysicsQuaid-i-Azam UniversityIslamabadPakistan

Personalised recommendations