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Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate field-effect transistor

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Abstract

An integrated optoelectronic circuit for ultrafast sampling of multi-terminal devices is described. This is achieved using optimized photoconductive switches fabricated from low-temperature-grown GaAs, monolithic integration of the device with the sampling circuit, control of the electromagnetic modes propagating on the coplanar waveguide using microfabricated airbridges, and discrimination of guided and freely-propagating modes using a novel electrooptic sampling method. As an example, the scattering parameters associated with the propagation of a picosecond pulse through one of the gates of a dual-gate heterojunction field-effect transistor are obtained at frequencies up to 300 GHz. The inter-gate capacitance is determined by measuring the electromagnetic transient coupled between the gates.

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Authors and Affiliations

  1. Hitachi Cambridge Laboratory, Hitachi Europe Limited, Cambridge, UK

    J. Allam

  2. Cavendish Laboratory, Microelectronics Research Centre, University of Cambridge, Madingley Road, CB3 0HE, Cambridge, UK

    N. de B. Baynes & J. R. A. Cleaver

  3. Central Research Laboratory, Hitachi Ltd, Higashi-koigakubo, 185, Kokubunji-shi, Tokyo, Japan

    K. Ogawa, T. Mishima & I. Ohbu

Authors
  1. J. Allam
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  2. N. de B. Baynes
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  3. J. R. A. Cleaver
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  4. K. Ogawa
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  5. T. Mishima
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  6. I. Ohbu
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Allam, J., Baynes, N.d.B., Cleaver, J.R.A. et al. Monolithically-integrated optoelectronic circuit for ultrafast sampling of a dual-gate field-effect transistor. Opt Quant Electron 28, 875–896 (1996). https://doi.org/10.1007/BF00820154

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  • DOI: https://doi.org/10.1007/BF00820154

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