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Ultrafast-ultrafine probing of high-speed electrical waveforms using a scanning force microscope with photoconductive gating

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Abstract

Picosecond photoconductivity in low-temperature-grown GaAs (LT GaAs) has been used to provide temporal resolution both in rigid probes and in scanning force microscope probes. This article reviews the fabrication and use of such probes. 2.5 ps temporal resolution and few microvolts sensitivity are obtained at arbitrary points on circuits with a spatial definition of 100 nm. Rigid probes are tested in application to analogue and digital circuits. As an alternative to electron beam testing, scanning force probes are applied toin situ imaging and waveform measurement. Finally, the use of time-resolved waveform analysis with scanning-force microscopy probes with semiconductor laser sources is demonstrated.

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Authors and Affiliations

  1. Center for Ultrafast Optical Science, University of Michigan, 1006 IST Bldg., 2200 Bonisteel, 48 109-2099, Ann Arbor, MI, USA

    J. Nees

  2. Fujitsu Laboratories Ltd, 1-10 Morinosato, Wakamiya Atsugi, 243-01, Kanagawa, Japan

    S. I. Wakana & S. Hama

Authors
  1. J. Nees
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  2. S. I. Wakana
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  3. S. Hama
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Nees, J., Wakana, S.I. & Hama, S. Ultrafast-ultrafine probing of high-speed electrical waveforms using a scanning force microscope with photoconductive gating. Opt Quant Electron 28, 843–865 (1996). https://doi.org/10.1007/BF00820152

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  • DOI: https://doi.org/10.1007/BF00820152

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