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Determining the parameters of local centers in a semiconductor from equilibrium charge-carrier concentration using a computer

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Abstract

A method of determining the parameters of local centers through the experimental dependence of charge carrier concentration on temperature is presented. The search algorithm for optimal parameter value as employed with a computer is developed. The method is verified by analysis of the experimental function p(T) for germanium and gallium arsenide specimens.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    M. A. Krivov, E. A. Popova & E. V. Malisova

Authors
  1. M. A. Krivov
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  2. E. A. Popova
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  3. E. V. Malisova
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 82–86, August, 1971.

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Krivov, M.A., Popova, E.A. & Malisova, E.V. Determining the parameters of local centers in a semiconductor from equilibrium charge-carrier concentration using a computer. Soviet Physics Journal 14, 1085–1088 (1971). https://doi.org/10.1007/BF00820072

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  • DOI: https://doi.org/10.1007/BF00820072

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