Advertisement

Soviet Physics Journal

, Volume 10, Issue 2, pp 21–23 | Cite as

Electrical properties of doped single crystals of ZnSb

  • N. L. Kostur
  • V. I. Psarev
Article

Abstract

The conductivity σ, thermo-emf α, and Hall constant R are reported for the range 100 °-490 ° K for ZnSb crystals doped with Ag, Au, Ga, In, Sn, Pb, and Te. Ag, Au, sn, and Pb act as acceptors, while In and Te increase the hole concentration, increase σ, and leduce α. This occuis at relatively high concentrations by foimation of InSb and ZnTe molecules. Ga in ZnSb acts as a donor (compensating) component.

Keywords

Electrical Property InSb ZnTe Hole Concentration Dope Single Crystal 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    E. D. Devyatkova, Yu. P. Maslakovets, and L. S. Stil'bans, ZhTF,22, 129, 1952.Google Scholar
  2. 2.
    M. V. Kot and S. Kh. Lapushner, Uch. Zap. Kishinev. Gos. Univ.,29, 139, 1957.Google Scholar
  3. 3.
    M. V. Kot and I. V. Kretsu, FTT,2, no. 6, 1250, 1960.Google Scholar
  4. 4.
    N. V. Kot, I. V. Kretsu, and P. I. Lebedev, Papers on Semiconductor Physics [in Russian], Izd. Kishinev. Univ., no. 1, 28, 1962.Google Scholar
  5. 5.
    V. I. Psarev and N. L. Kostur, Izv. VUZ. Fizika [Soviet Physics Journal], no. 2, 1967.Google Scholar
  6. 6.
    H. Bush and W. Winkler, collection: Semiconductors in Science and Technology [Russian translation], Izd. AN SSSR,2, 569, 1958.Google Scholar

Copyright information

© The Faraday Press, Inc. 1970

Authors and Affiliations

  • N. L. Kostur
    • 1
  • V. I. Psarev
    • 1
  1. 1.Chernovtsy State UniversityUSSR

Personalised recommendations