Abstract
The electron, donor, and acceptor distributions along the thickness of epitaxial gallium arsenide films were studied as functions of the nature and orientation of the substrate. There is a discussion of mechanisms which may be responsible for these distributions.
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K. L. Lawley, J. Electrochem. Soc.,113, No. 3, 240 (1966).
R. R. Moest, J. Electrochem. Soc.,113, No. 2, 141 (1966).
R. R. Moest and D. T. Lossota, J. Electrochem. Soc.,114, No. 1, 110 (1967).
F. Hasegawa and T. Saito, Japan. J. Appl. Phys.,7, 1125, 1342, 1540 (1968).
V. K. Subashiev and S. A. Poltinnikov, Fiz. Tverd. Tela.11, No. 6, 1169 (1960).
C. C. Allen, L. H. Clevenger, and D. C. Gupta, J. Electrochem. Soc.,113, No. 5, 508 (1966).
H. Frank, Phys. Status Solidi,18, No. 1, 401 (1966).
V. A. Ponomarev, Élektronnaya Tekhnika, Seriya 2, Poluprovodnikovye Pribory, No. 2, 156 (1967).
B. S. Lisenker, I. E. Maronchuk, Yu. E. Maronchuk, V. N. Shumskii, and S. I. Shipilova, Neorganicheskie Materialy, No. 2 (1969).
A. S. Grove, A. Roder, and C. T. Sah, J. Appl. Phys.,36, No. 3, 802 (1965).
R. A. Joyce, J. C. Weaver, and D. J. Maule, J. Electrochem. Soc., 112, No. 11, 1100 (1965).
D. Kahng, C. O. Thomas, and R. C. Manze, J. Electrochem. Soc.,109, No. 11, 1106, 1055 (1962).
D. Kahng, C. O. Thomas, and R. C. Manz, J. Electrochem. Soc.,110, No. 5, 394 (1963).
V. I. Silvestry and F. Fang, J. Electrochem. Soc.,111, No. 10 (1964).
T. Arizumi, T. Nishinaga, and M. Kakehi, Japan. J. Appl. Phys.,7, No. 5, 468 (1968).
B. A. Joyce, J. Crystal Growth,3–4, 43–59 (1968).
L. N. Alexandrov and Yu. G. Sidorov, Thin Solid Films, No. 3, 395 (1969).
E. A. Krivorotov, L. N. Aleksandrov, and Yu. G. Sidorov, Izv. Akad. Nauk SSSR, Neorganicheskie Materialy,5, No. 2 (1965).
H. C. Abbink, R. M. Broudy, and G. P. McCarthy, J. Appl. Phys.,39, No. 10, 4673 (1968).
L. G. Lavrent'eva and Yu. G. Kataev, in: Gallium Arsenide [in Russian], No. 2 (1969), p. 46.
L. G. Lavrent'eva, Yu. G. Kataev, and V. A. Moskovskii, Izv. VUZ, Fiz., No. 11, 159 (1969).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 96–100, January, 1971.
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Lavrent'eva, L.G., Vilisova, M.D., Kataev, Y.G. et al. Electron and impurity distributions in epitaxial n-type gallium arsenide. Soviet Physics Journal 14, 73–76 (1971). https://doi.org/10.1007/BF00819864
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DOI: https://doi.org/10.1007/BF00819864