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Transport mechanism at a metal-gallium arsenide contact

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Abstract

A study was made of the temperature dependence of the current-voltage characteristics of surface-barrier metal-n-type gallium arsenide junctions with various doping levels. The transport mechanism is shown to be governed by the temperature and by the electric field in the space-charge layer; thermionic or thermionic-field emission occurs.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    A. P. Vyatkin, N. K. Maksimova, G. V. Zhivotov & Yu. A. Zotov

Authors
  1. A. P. Vyatkin
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  2. N. K. Maksimova
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  3. G. V. Zhivotov
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  4. Yu. A. Zotov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 82–87, January, 1971.

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Vyatkin, A.P., Maksimova, N.K., Zhivotov, G.V. et al. Transport mechanism at a metal-gallium arsenide contact. Soviet Physics Journal 14, 61–65 (1971). https://doi.org/10.1007/BF00819861

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  • DOI: https://doi.org/10.1007/BF00819861

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