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Zaidman, S.A., Gaman, V.I., Osinenko, V.M. et al. The determination of the energy position of the recombination level in the base of a diode obtained from heat-hardened silicon. Soviet Physics Journal 10, 89–90 (1967). https://doi.org/10.1007/BF00819806
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DOI: https://doi.org/10.1007/BF00819806