Skip to main content
Log in

The determination of the energy position of the recombination level in the base of a diode obtained from heat-hardened silicon

  • Brief Communications
  • Published:
Soviet Physics Journal Aims and scope

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

References

  1. M. I. Iglitsyn, Yu. A. Kontsevoi, and A. I. Sidorov, ZhTF,27, 11. 2461, 1957.

    Google Scholar 

  2. W. Shockley and W. Read, Phys. Rev.,87, 5, 835, 1952.

    Google Scholar 

  3. G. N. Galkin, FTT, 2, no. 1, 1960.

  4. Toshihumi Asakawa, J. of the Physical Society of Japan, vol. 16, no. 10, October, 1961.

  5. B. V. Kornilov, Topics in Radioelectronics [in Russian], ser. 2, p. 66, 1965.

  6. Yu. R. Nosov and L. T. Ramus, FTT,4, no. 12, 1962.

  7. K. D. Glinchuk and N. M. Litovchenko, FTT,5, no. 11, 1963.

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zaidman, S.A., Gaman, V.I., Osinenko, V.M. et al. The determination of the energy position of the recombination level in the base of a diode obtained from heat-hardened silicon. Soviet Physics Journal 10, 89–90 (1967). https://doi.org/10.1007/BF00819806

Download citation

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00819806

Keywords

Navigation