Abstract
The possible nature of the band structure in crystal films is examined on the basis of a consideration of the symmetry possessed by their structure.
For germanium and silicon of the p- and n-types with various different orientations of the film the connection is found between the band structures of the film and of the bulk crystal. The result is obtained that with the orientation [111] an n-germanium film, like an n-silicon film with the same orientation must have a single-trough minimum.
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Tavger, B.A. Electron energy bands in semiconductor films. Soviet Physics Journal 10, 74–78 (1967). https://doi.org/10.1007/BF00819800
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DOI: https://doi.org/10.1007/BF00819800