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Effect of neutron bombardment on the forward current of silicon mesa diodes

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Soviet Physics Journal Aims and scope

Conclusions

  1. 1.

    The use of the initial region of the I, V characteristics of the diodes is recommended for reduced radiation sensitivity.

  2. 2.

    The decrease in the forward current of the mesa diodes studied can be attributed primarily to an increase in the resistance of the diode base during neutron bombardment.

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Literature cited

  1. V. D. Korshunov and E. A. Kostyuchenko, Izvestiya VUZ., Fizika, No. 6, 17 (1968).

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  2. I. P. Stepanenko, Basic Theory of Transistors and Transistor Circuits [in Russian], Izd-vo Énergiya, Moscow (1967).

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  3. K. Lark-Horovitz, in: Semiconductor Materials [Russian translation], IL, Moscow (1964).

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  4. V. I. Stafeev, Zh. Tekh. Fiz.,28, 1631 (1958).

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  5. Effect of Radiation of the Materials and Elements of Electronics Circuits [in Russian], Atomizdat, Moscow (1967).

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Author information

Authors and Affiliations

  1. Ul'yanovsk Polytechnic Institute, USSR

    V. D. Korshunov & E. A. Kostyuchenko

Authors
  1. V. D. Korshunov
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  2. E. A. Kostyuchenko
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 12, No. 2, pp. 117–119, February, 1969.

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Korshunov, V.D., Kostyuchenko, E.A. Effect of neutron bombardment on the forward current of silicon mesa diodes. Soviet Physics Journal 12, 225–227 (1969). https://doi.org/10.1007/BF00819320

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  • DOI: https://doi.org/10.1007/BF00819320

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