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Temperature dependence of the injection luminescence of diffused p-n junctions in silicon carbide

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Authors and Affiliations

  1. Moscow Power Engineering Institute, USSR

    I. V. Kryachko

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  1. I. V. Kryachko
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Additional information

Translated from Izvestiya Vysshikh Uzhebnykh Zavedenii, Fizika, Vol. 12, No. 2, pp. 99–103, February, 1969.

The author thanks I. K. Vereshchagin for interest in the study, and G. F. Kholuyanov, É. E. Violin, and Yu. A. Vodakov for graciously furnishing the samples.

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Kryachko, I.V. Temperature dependence of the injection luminescence of diffused p-n junctions in silicon carbide. Soviet Physics Journal 12, 211–214 (1969). https://doi.org/10.1007/BF00819317

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  • DOI: https://doi.org/10.1007/BF00819317

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