Abstract
An analytic solution is obtained for the two-dimensional continuity equation for the concentration of minority carriers in the passive base of a drift-free transistor havinga strip emitter, for the case of low injection levels in the base. Simple equations are given for the base current and current gain for arbitrary values of the surface-recombination rate.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 12, No. 2, pp. 45–49, February, 1969.
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Petrov, B.K., Synorov, V.F. Dependence of the current gain on the surface-recombination rate in a drift-free transistor. Soviet Physics Journal 12, 169–172 (1969). https://doi.org/10.1007/BF00819310
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DOI: https://doi.org/10.1007/BF00819310