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I, V characteristics of a metal-dielectric-semiconductor system

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Abstract

A study of the I, V characteristics and the switching processes of a metal-(chalcogenide glass)-germanium system is reported.

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Authors and Affiliations

  1. Kuznetsov Siberian Physicotechnical Institute, USSR

    V. I. Gaman, V. D. Bazarov & V. A. Reznikov

Authors
  1. V. I. Gaman
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  2. V. D. Bazarov
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  3. V. A. Reznikov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 12, No. 2, pp. 15–19, February, 1969.

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Gaman, V.I., Bazarov, V.D. & Reznikov, V.A. I, V characteristics of a metal-dielectric-semiconductor system. Soviet Physics Journal 12, 145–148 (1969). https://doi.org/10.1007/BF00819304

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  • DOI: https://doi.org/10.1007/BF00819304

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