Abstract
A method is given for obtaining p-n junctions by diffusing zinc or cadmium into InP. The current-voltage characteristics of such a p-n junction at room temperature are given.
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In conclusion the authors would like to thank Prof. D. N. Nasledov and V. V. Galavanov for suggesting the subject and for their constant interest.
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Metreveli, S.G., Kundukhov, R.M. Indium phosphide junctions. Soviet Physics Journal 9, 98–100 (1966). https://doi.org/10.1007/BF00818752
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DOI: https://doi.org/10.1007/BF00818752