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Determining effective lifetime of minority carriers from growth curve of voltage across A p-n junction

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Abstract

Experimental data from determinations of the effective lifetime of the minority carriers, their rate of surface recombination, and their rate of recombination at a non-rectifying contact is reported for germanium alloy diodes. The method of determining these quantities is based on a transition process of switching the diode from the neutral to the conducting state using a current pulse cycle.

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References

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Authors and Affiliations

  1. Kuznetsov Siberian Institute of Technical Physics, USSR

    V. I. Gaman, V. M. Kalygina & V. F. Azafonnikov

Authors
  1. V. I. Gaman
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  2. V. M. Kalygina
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  3. V. F. Azafonnikov
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Gaman, V.I., Kalygina, V.M. & Azafonnikov, V.F. Determining effective lifetime of minority carriers from growth curve of voltage across A p-n junction. Soviet Physics Journal 9, 15–17 (1966). https://doi.org/10.1007/BF00818729

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  • DOI: https://doi.org/10.1007/BF00818729

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