Skip to main content
SpringerLink
Log in

Growth rate of a crystal dissipating latent heat of crystallization by radiation

  • Published:
Soviet Physics Journal Aims and scope

Abstract

An analytically precise expression is given for calculating the growth rate of a crystal with rectangular cross-section when its thermal conductivity coefficient depends on temperature, and heat exchange by radiation occurs on its boundary.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. E. Billig, Proc. Roy. Soc., 229A, 1955.

  2. E. Billig, Proc. Roy. Soc., 235, 37, 1956.

    Google Scholar 

  3. G. P. Boikov and V. D. Kuchin. Izv. VUZ, Fizika, no. 2, 1959.

  4. G. P. Boikov and V. V. Ivanov, Izv. VUZ, Fizika, no. 6, 1962.

  5. Collection: Growth Processes and Crystal Growth [Russian translation], IL, 1963.

  6. Van-Buren, Defects in Crystals [Russian translation], IL, 1962.

Download references

Author information

Authors and Affiliations

  1. Kirov Polytechnic Institute, Tomsk

    V. V. Salomatov

Authors
  1. V. V. Salomatov
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Salomatov, V.V. Growth rate of a crystal dissipating latent heat of crystallization by radiation. Soviet Physics Journal 9, 38–39 (1966). https://doi.org/10.1007/BF00818488

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00818488

Keywords

Search

Navigation