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Transients in switching a diode with a thin base

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Soviet Physics Journal Aims and scope

Abstract

An analytical expression is obtained for the duration of the “shelf” which is observed when a diode with a limited base is switched from the forward to the reverse direction. The problem is solved for an arbitrary value of the recombination velocity at the nonrectifying contact.

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References

  1. D. P. Kennedy, IRE Trans., “On electron devices,” ED-9, no. 2, 174–182, 1962.

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  2. N. A. Penin, Radiotekhnika i elektronika,2 8, 1053, 1957.

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Authors and Affiliations

  1. Kuznetsov Siberian Physico-Technical Institute, Siberia

    V. I. Gaman & S. A. Zaidman

Authors
  1. V. I. Gaman
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  2. S. A. Zaidman
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Gaman, V.I., Zaidman, S.A. Transients in switching a diode with a thin base. Soviet Physics Journal 9, 9–10 (1966). https://doi.org/10.1007/BF00818479

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  • DOI: https://doi.org/10.1007/BF00818479

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