Soviet Physics Journal

, Volume 8, Issue 6, pp 93–96 | Cite as

The ampere-second characteristic of high-power silicon rectifiers

  • A. E. Radechko
  • A. L. Rvachev


An examination of the conditions under which high-power silicon rectifiers lose thermal stability is presented. A method is given for calculating the ampere-second characteristics, and graphs of limiting p-n junction temperature during overload are presented, as well as the ampere-second characteristic of a VK-200 for certain load conditions. Reference is made to methods of extending the limits of thermal stability of this device, as well as the rectified current density.

It is possible to use the ampere-second characteristic of a semiconductor device as a measure of its overload capacity, that is, the dependence of the direct current overload on the time during which the device can sustain this current without damage to the rectifying element. Current overload protection in rectifier units should be selected in this way so that the ampere-second characteristic lies below that of the device being protected.

Hence the calculation of the ampere-second characteristic of silicon power devices assumes considerable importance in the design of new rectifier units from the point of view of reliability and continuous operation at maximum efficiency.


Silicon Thermal Stability Load Condition Semiconductor Device Maximum Efficiency 
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Copyright information

© The Faraday Press, Inc. 1968

Authors and Affiliations

  • A. E. Radechko
    • 1
  • A. L. Rvachev
    • 1
  1. 1.Odessa Polytechnic InstituteUSSR

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