Literature cited
A. Shibata, Japan, J. Appl. Phys.,3, 11 (1964).
V. I. Fistul', Fiz. Tverd. Tela,6, 12 (1964).
E. W. Easley and P. R. Blair, J. Appl. Phys.,31, 10 (1960).
V. N. Bykov and S. V. Solov'ev (editors), Effects of Radiation on Materials and Elements of Electronic Circuits [in Russian], Atomizdat, Moscow (1967), Ch. 6.
G. E. Pikus, Basic Theory of Semiconducting Devices [in Russian], Nauka, Moscow (1965).
A. I. Imenkov et al., Fiz. Tverd. Tela,6, 8 (1964).
L. W. Aukerman, J. Appl. Phys.,30, 8 (1959).
S. P. Konobeevskii (editor), Effects of Radiation on Materials [in Russian], Atomizdat, Moscow (1967).
N. Holoniak, jr., J. Appl. Phys.,32, 130 (1961).
C. B. Pierce et al., J. Appl. Phys.,33, 10 (1962).
C. B. Pierce and A. D. Kautz, J. Appl. Phys.,34, 5 (1963).
A. P. Vyatkin et al., in: The Physics of p-n Junctions [in Russian], Zinatné (1966), p. 147.
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Translated from Izvestiya VUZ. Fizika, No. 3, pp. 146–149, March, 1970.
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Alekseeva, Z.M., Brudnyi, V.N., Krivov, M.A. et al. Current-voltage characteristics of gallium arsenide tunnel p-n junctions irradiated by fast neutrons. Soviet Physics Journal 13, 404–407 (1970). https://doi.org/10.1007/BF00818343
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DOI: https://doi.org/10.1007/BF00818343