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Epitaxial gallium arsenide

3. Growth-rate anisotropy in the crystallographic range (111)A-(100)-(111)B

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Soviet Physics Journal Aims and scope

Conclusions

  1. 1.

    A study has been made of the growth of epitaxial gallium arsenide films on planes having simple and complicated crystallographic indices over the substrate-orientation range (111)A-(100)-(111)B.

  2. 2.

    The tangential velocity of an isolated growth step and the diffusion length for adsorbed atoms on the (111)A, (111)B, and (100) planes have been determined.

  3. 3.

    The anisotropy in the growth rates of epitaxial films on various planes has been calculated; comparison shows a satisfactory agreement with experiment.

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Literature cited

  1. L. G. Lavrent'eva and M. P. Yakubenya, in: Gallium Arsenide [in Russian], Vol. 2, Izd. TGU, Tomsk (1969).

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  2. W. K. Burton, N. Cabrera, and F. C. Frank, in: Elementary Crystal-Growth Processes [Russian translation], IL, Moscow (1959).

    Google Scholar 

  3. L. G. Lavrent'eva, M. P. Yakubenya, V. D. Dedkov, et al., in: Growth and Structure of Single-Crystal Films [in Russian], Izd. Nauka (1968).

  4. L. N. Aleksandrov, E. A. Krivorotov, and Yu. G. Sidorov, in: Gallium Arsenide [in Russian], Vol. 3, Izd. TGU, Tomsk (1970).

    Google Scholar 

  5. A. A. Chernov and B. Ya. Lyubov, in: Crystal Growth [in Russian], Vol. 5, Izd. Nauka (1965).

  6. N. Cabrera and R. W. Kahlman, in: Theory and Practice of Crystal Growth [Russian translation], Metallurgiya (1968), p. 9.

  7. L. G. Lavrent'eva and Yu. G. Kataev, Izv. VUZ. Fiz., No. 11, 159 (1969).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    L. G. Lavrent'eva, M. P. Yakubenya & V. A. Moskovkin

Authors
  1. L. G. Lavrent'eva
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  2. M. P. Yakubenya
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  3. V. A. Moskovkin
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Additional information

Translated from Izvestiya VUZ. Fizika, No. 3, pp. 69–75, March, 1970.

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Lavrent'eva, L.G., Yakubenya, M.P. & Moskovkin, V.A. Epitaxial gallium arsenide. Soviet Physics Journal 13, 331–336 (1970). https://doi.org/10.1007/BF00818320

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  • DOI: https://doi.org/10.1007/BF00818320

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