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Effects of growth conditions on the electrical properties of epitaxial p-n junctions in gallium arsenide

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Authors and Affiliations

  1. Kuznetsov Siberian Physicotechnical Institute, USSR

    M. D. Vilisova, L. G. Lavrent'eva & L. B. Chernikova

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  1. M. D. Vilisova
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  2. L. G. Lavrent'eva
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  3. L. B. Chernikova
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Vilisova, M.D., Lavrent'eva, L.G. & Chernikova, L.B. Effects of growth conditions on the electrical properties of epitaxial p-n junctions in gallium arsenide. Soviet Physics Journal 10, 95–96 (1967). https://doi.org/10.1007/BF00818236

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  • DOI: https://doi.org/10.1007/BF00818236

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