Abstract
The electrical properties of polycrystalline thick layers and the corresponding thin films of the new semiconducting material Cu2S are investigated. It is established that this compound is a semiconductor with p-type conductivity and a wide forbidden band (1.8 ± 0.1 eV), that it does not break down under thermal sublimation, and that the properties of thick layers are largely retained in thin films, if the thickness of the latter is greater than 0.7 μ.
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References
M. Hansen and K. Anderko, The Structure of Binary Alloys [Russian translation], Metallurgizdat, 1962.
J. Bruce Wagner and Carl Wagner, J. Chem. Phys., 26, 1602, 1957.
N. A. Gasanova, Izv. AN Azerb. SSR, seriya fiz.-mat., no. 3, 91, 1963.
G. P. Sorokin, Izv. VUZ. Fizika, no. 6, 158, 1961; Fizika, no. 4, 140, 1965.
J. Appel and G. Lautz, Physica, 20, 1110, 1954; Zs. Naturforsch. 10a, 530, 1955.
V. P. Zhuze, I. M. Tsidil'kovskii, and T. S. Bartitskaya, ZhTF, 28, 1646, 1959.
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Sorokin, G.P., Paradenko, A.P. Electrical properties of Cu2S. Soviet Physics Journal 9, 59–61 (1966). https://doi.org/10.1007/BF00818183
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DOI: https://doi.org/10.1007/BF00818183