Abstract
The photo-diffusion emf in thin semiconductor slabs with sawtoothshaped surface is calculated for arbitrary surface- and volume-recombination speeds.
It is shown that, for linear dimensions of the “saw” elements equal to the penetration depth of light, i. e., for samples of micron thickness, and for certain surface- and volume-recombination velocities, the emf in a single element can have a value κT/q = 0.025 V (T = 300 ° K). Electromotive forces of tens of volts can be obtained by connecting many such elements in series, which under certain conditions can be made in coated semiconductor films.
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References
S. M. Ryvkin, Photoelectric Effects in Semiconductors [in Russian], Moscow-Leningrad, 1963.
P. P. Konorov and V. M. Lyubin, FTT, no. 1, 1964.
S. A. Semiletov, FTT,4, 5, 1241, 1962.
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Kovtonyuk, N.F., Fedonin, V.F. Theory of the photo-emf in semiconductors with a sawtooth surface. Soviet Physics Journal 9, 16–18 (1966). https://doi.org/10.1007/BF00818172
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DOI: https://doi.org/10.1007/BF00818172