Soviet Physics Journal

, Volume 9, Issue 2, pp 79–80 | Cite as

Analysis of transition processes in semiconductor diodes using charge formula

  • V. I. Gaman


The transition processes in a narrow-base semiconductor diode are analyzed by a charge method taking account of the p-n junction barrier capacitance. It is shown that the on and off transition switching processes of a diode can be described by three experimentally determined parameters.


Transition Process Transition Switching Switching Process Semiconductor Diode Charge Method 
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Copyright information

© The Faraday Press, Inc 1969

Authors and Affiliations

  • V. I. Gaman
    • 1
  1. 1.Kuznetsov Siberian Institute of Technical PhysicsRussia

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