Analysis of transition processes in semiconductor diodes using charge formula
The transition processes in a narrow-base semiconductor diode are analyzed by a charge method taking account of the p-n junction barrier capacitance. It is shown that the on and off transition switching processes of a diode can be described by three experimentally determined parameters.
KeywordsTransition Process Transition Switching Switching Process Semiconductor Diode Charge Method
- 1.H. J. Kuno, IEEE Trans. on Electron Devices, ED-11, no. 1, 8, 1964.Google Scholar
- 2.V. I. Gaman, Izv. VUZ. Fizika [Soviet Physics Journal], no. 1, 50, 1965.Google Scholar
- 3.V. I. Gaman and V. M. Kalygina, Izv. VUZ. Fizika [Soviet Physics Journal], no. 5, 77, 1965.Google Scholar
- 4.S. R. Lederhandler and L. J. Giacoletto, Proc. IRE,43, no. 4, 477, 1955.Google Scholar