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Soviet Physics Journal

, Volume 9, Issue 2, pp 79–80 | Cite as

Analysis of transition processes in semiconductor diodes using charge formula

  • V. I. Gaman
Article

Abstract

The transition processes in a narrow-base semiconductor diode are analyzed by a charge method taking account of the p-n junction barrier capacitance. It is shown that the on and off transition switching processes of a diode can be described by three experimentally determined parameters.

Keywords

Transition Process Transition Switching Switching Process Semiconductor Diode Charge Method 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

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    H. J. Kuno, IEEE Trans. on Electron Devices, ED-11, no. 1, 8, 1964.Google Scholar
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    V. I. Gaman, Izv. VUZ. Fizika [Soviet Physics Journal], no. 1, 50, 1965.Google Scholar
  3. 3.
    V. I. Gaman and V. M. Kalygina, Izv. VUZ. Fizika [Soviet Physics Journal], no. 5, 77, 1965.Google Scholar
  4. 4.
    S. R. Lederhandler and L. J. Giacoletto, Proc. IRE,43, no. 4, 477, 1955.Google Scholar

Copyright information

© The Faraday Press, Inc 1969

Authors and Affiliations

  • V. I. Gaman
    • 1
  1. 1.Kuznetsov Siberian Institute of Technical PhysicsRussia

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