Abstract
An analysis is made of the switching effect caused in thin-film metal-dielectric-metal systems by thermal processes. The effect results from the local nature of the current passage from the surfaces of individual microscopic protuberances on the electrode surfaces. A description is found for the S-shaped part of the current-voltage characteristic for the case of field-assisted thermionic emission of electrons into the dielectric.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 63–67, April, 1971.
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Kostsov, É.G. Switching mechanism in a thin-film metal-dielectric-metal system. Soviet Physics Journal 14, 475–478 (1971). https://doi.org/10.1007/BF00817974
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DOI: https://doi.org/10.1007/BF00817974