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Effect of pressure on the properties of p-n junctions with radiation-induced defects

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Literature cited

  1. V. I. Gaman and V. F. Agafonnikov, Izv. VUZ. Fiz., No. 12, 97 (1967).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    V. I. Gaman & V. F. Agafonnikov

Authors
  1. V. I. Gaman
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  2. V. F. Agafonnikov
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Translated from Izvestiya VUZ. Fizika, No. 12, pp. 141–143, December, 1969.

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Gaman, V.I., Agafonnikov, V.F. Effect of pressure on the properties of p-n junctions with radiation-induced defects. Soviet Physics Journal 12, 1634–1636 (1969). https://doi.org/10.1007/BF00816962

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  • DOI: https://doi.org/10.1007/BF00816962

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