Abstract
The dependences of the magnetoresistance and Hall effect on the effective magnetic field at room temperature and at liquid nitrogen temperature have been studied for diborides of the IVA metals. The concentrations and relative mobilities of the current carriers are calculated on the basis of a two-band model with n1 = n2 under the assumption that theory derived for metals holds for these compounds. The results are compared with those calculated on the basis of the one-band model.
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Translated from Izvestiya VUZ. Fizika, No. 12, pp. 69–74, December, 1969.
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Malinskii, B.I., Nemchenko, V.F. & L'vov, S.N. Magnetoresistance and hall effect of diborides of IVA metals. Soviet Physics Journal 12, 1567–1570 (1969). https://doi.org/10.1007/BF00816945
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DOI: https://doi.org/10.1007/BF00816945