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Electrical characteristics of nickel/gallium-arsenide barrier layer diodes

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Abstract

The voltage-current and voltage-capacitance characteristics of rectifier barriers obtained by electrochemical deposition of nickel on electronic gallium arsenide were studied. It turned out that the electrical properties of barrier layer diodes depend in large measure on the conditions of formation of the rectifier junction, on the charge carrier concentration in the semiconductor, and on the crystallographic orientation of its surface. Schottky-type barriers were obtained by appropriate treatment of the semiconductor surface.

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Authors and Affiliations

  1. Kuznetsov Siberian Physicotechnical Institute, USSR

    A. P. Vyatkin, N. K. Maksimova, G. A. Kataev & V. A. Batenkov

Authors
  1. A. P. Vyatkin
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  2. N. K. Maksimova
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  3. G. A. Kataev
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  4. V. A. Batenkov
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Vyatkin, A.P., Maksimova, N.K., Kataev, G.A. et al. Electrical characteristics of nickel/gallium-arsenide barrier layer diodes. Soviet Physics Journal 10, 55–59 (1967). https://doi.org/10.1007/BF00816817

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  • DOI: https://doi.org/10.1007/BF00816817

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