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Injection-level dependence of the surface recombination rate of the base of alloyed germanium diodes

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Literature cited

  1. V. I. Gaman and S. A. Zaidman, Izvestiya VUZ. Fizika [Soviet Physics Journal], no. 2, 1967.

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Authors and Affiliations

  1. Kuznetsov Siberian Physicotechnical Institute, USSR

    V. I. Gaman, V. M. Kalygina & F. N. Baltakov

Authors
  1. V. I. Gaman
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  2. V. M. Kalygina
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  3. F. N. Baltakov
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Translated from Izvestiya VUZ. Fizika, Vol. 11, No. 11, pp. 124–126, November 1968.

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Gaman, V.I., Kalygina, V.M. & Baltakov, F.N. Injection-level dependence of the surface recombination rate of the base of alloyed germanium diodes. Soviet Physics Journal 11, 103–105 (1968). https://doi.org/10.1007/BF00816074

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  • DOI: https://doi.org/10.1007/BF00816074

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