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Transistor frequency meter for measuring the thickness and growth rate of films

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Measurement Techniques Aims and scope

Conclusions

Investigations carried out have shown the feasibility of constructing transistorized frequency-voltage converters with a high output voltage and a high linearity. The use of a similar circuit in the KIT-1 and KIT-2 instruments permit not only the thickness to be measured but also the rate of growth of a film in the case of deposition rates from O.1Å/sec and higher.

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Literature cited

  1. Plenochnaya Mikroélektronika (Film Microelectronics) [in Russian], (editor, L. Khollénda), Mir, Moscow (1968).

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  2. M. S. Antonovskii, B. L. Dronov, V. P. Kuznetsov and V. T. Nikolaev, Élektronnaya Tekhnika,6, No. 4(1967).

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Authors
  1. V. T. Nikolaev
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  2. V. N. Chernyaev
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Additional information

Translated from Izmeritel'naya Tekhnika, No. 5, pp. 63–64, May, 1973.

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Nikolaev, V.T., Chernyaev, V.N. Transistor frequency meter for measuring the thickness and growth rate of films. Meas Tech 16, 732–734 (1973). https://doi.org/10.1007/BF00815827

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  • DOI: https://doi.org/10.1007/BF00815827

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