Abstract
Procedures recently proposed for determining electrophysical parameters of highly doped semiconductors from the IR reflection spectra are analyzed. The case of n-type GaAs is discussed. Optical and Hall measurements have been carried out for a few samples, and it has been found that the electron density determined from the optical measurements is in good agreement with the Hall values, while the mobilities may differ significantly. It is concluded that mechanical polishing causes problems.
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Translated from Izvestiya VUZ. Fizika, No. 10, pp. 65–69, October, 1969.
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Mashukov, Y.P. Plasma reflection in gallium arsenide. Soviet Physics Journal 12, 1286–1289 (1969). https://doi.org/10.1007/BF00815670
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DOI: https://doi.org/10.1007/BF00815670