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Effect of distributed base resistance of the emitter current density in drift transistors with a circular emitter

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Abstract

The emitter current density is calculated as a function of the distance from the center of the circular emitter of a drift transistor at low base injection levels. Simple expressions are obtained for the base spread resistance for arbitrary base currents.

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Literature cited

  1. N. H. Fletcher, Proc. IRE,43, 551 (1955).

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  2. I. R. Hauser, IEEE, Trans. Electr. Devic.,ED-11, 237 (1964).

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  3. R. Emeis, A. Herlet, and E. Spenke, Proc. IRE,46, 1220 (1958).

    Google Scholar 

  4. G. D. Glebov (editor), Manufacture of Semiconductor Devices [Russian translation], Oborongiz (1962).

  5. G. E. Pikus, Basic Theory of Semiconductor Devices [in Russian], Izd. Nauka (1965).

  6. A. V. Krasilov and A. F. Trutko, Transistor Analysis [in Russian], Izd. Energiya (1964).

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Authors and Affiliations

  1. Voronezh State University, USSR

    B. K. Petrov & V. F. Synorov

Authors
  1. B. K. Petrov
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  2. V. F. Synorov
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Translated from Izvestiya Vysshikh Uchebnykh ZavedeniiFizika, Vol. 12, No. 1, pp. 7–11, January, 1969.

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Petrov, B.K., Synorov, V.F. Effect of distributed base resistance of the emitter current density in drift transistors with a circular emitter. Soviet Physics Journal 12, 1–5 (1969). https://doi.org/10.1007/BF00815505

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  • DOI: https://doi.org/10.1007/BF00815505

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