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Effect of dislocations on the properties of silicon p-n junctions

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Authors and Affiliations

  1. Gor'kii Research Physicotechnical Institute, USSR

    V. A. Panteleev & L. V. Lainer

Authors
  1. V. A. Panteleev
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  2. L. V. Lainer
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, Vol. 12, No. 5, pp. 145–147, May, 1969.

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Panteleev, V.A., Lainer, L.V. Effect of dislocations on the properties of silicon p-n junctions. Soviet Physics Journal 12, 677–679 (1969). https://doi.org/10.1007/BF00814871

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  • DOI: https://doi.org/10.1007/BF00814871

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