Literature cited
C. T. Sah, IRE, Trans. Electr. Dev., ED-9, 1, 94 (1962).
A. van der Ziel, Noise [Russian translation], IL (1961).
I. C. Martin et al., Electron Letters,2, 9, 343 (1966).
I. F. Gibbons, IRE Trans. El. Dev.,9, 3, 308 (1962).
E. A. Faulkner and D. W. Harding, Electron Letters,3, 2, 71 (1967).
D. Herchner, Frequenz,21, 2, 31 (1967).
K. Santha Kumari and B. A. P. Tantry, Indian J. Pure and Appl. Phys.,3, No. 10, 380 (1965).
V. F. Fokina, in: Semiconductor Devices and Their Application [in Russian], Ya. A. Fedotov (editor), No. 12, Sovetskoe Radio (1964).
Yu. S. Karpov, Fiz. Tverd. Tela,3, 6, 1691 (1961).
I. M. Stewart, Proc. IEE, B106, Suppl. No. 17 (1959).
Ts. Sibauké, Electron Engineering,5, 5, 50 (1963).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, Vol. 12, No. 6, pp. 136–139, June, 1969.
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Boldyrev, I.I., Shchevelev, M.I. & Akimov, M.A. Noise properties of planar transistors. Soviet Physics Journal 12, 804–806 (1969). https://doi.org/10.1007/BF00814192
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DOI: https://doi.org/10.1007/BF00814192