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Soviet Physics Journal

, Volume 13, Issue 2, pp 223–225 | Cite as

Reflection-pattern study of the anisotropy of the etching of gallium antimonide

  • A. P. Vyatkin
  • K. N. Fedorov
Article

Abstract

An etchant has been found for the selective etching of gallium antimonide, and a study has been made of the anisotropy of the dissolution along the main crystallographic directions. The dissolution rates of the gallium antimonide faces obey
$$v_{\left( {111} \right)B} > v_{\left( {1 \cdot 0} \right)} > v_{\left( {110} \right)} > v_{\left( {111} \right)A} .$$
An optical method has been developed for orienting gallium antimonide crystals on the basis of the main crystallographic planes. Reflection patterns from GaSb differ from those from gallium arsenide, germanium, and silicon.

Keywords

Silicon Reflection Anisotropy Gallium Germanium 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Consultants Bureau 1972

Authors and Affiliations

  • A. P. Vyatkin
    • 1
  • K. N. Fedorov
    • 1
  1. 1.V. D. Kuznetsov Siberian Physicotechnical InstituteTomsk State UniversityUSSR

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