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Relaxation of a phomocapacitive diode in the impurity-absorption region

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Literature cited

  1. F. M. Berkovskii and S. M. Ryvkin, Fiz. Tverd. Tela.,4, No. 2 (1962).

  2. A. V. Voitsekhovskii and A. S. Petrov, Izv. VUZ. Fiz., No. 5 (1968).

  3. W. Shockley, Electrons and Holes in Semiconductors, Van Nostrand, New York (1950).

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  4. S. M. Ryvkin, Photoelectricity in Semiconductors [in Russian], GIFML, Moscow (1963).

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  5. V. A. Ditkin and A. P. Prudnikov, Handbook on Operational Calculus [in Russian], Izd. Vysshaya Shkola, Moscow (1965).

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk State University, USSR

    A. V. Voitsekhovskii

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  1. A. V. Voitsekhovskii
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika No. 9, pp. 71–75, September, 1969.

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Voitsekhovskii, A.V. Relaxation of a phomocapacitive diode in the impurity-absorption region. Soviet Physics Journal 12, 1157–1160 (1972). https://doi.org/10.1007/BF00813428

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  • DOI: https://doi.org/10.1007/BF00813428

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