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Synthesis technique for and certain properties of AsxSb1-xSI crystals

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Abstract

A technique for synthesizing AsxSb1-xSI is described. The system is shown to form crystals of a limited solid solution. In the region in which a solid solution is formed, the crystals are ferroelectric photoconductors. An arsenic admixture reduces the Curie point from 295°K (SbSI) to 243 °K (As0.1(Sb0.9SI). A study of the basic electrophysical properties of these crystals is reported.

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Authors and Affiliations

  1. Uzhgorod State University, USSR

    N. I. Dovgoshei, I. D. Turyanitsa, D. V. Chepur, V. Yu. Slivka & N. D. Savchenko

Authors
  1. N. I. Dovgoshei
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  2. I. D. Turyanitsa
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  3. D. V. Chepur
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  4. V. Yu. Slivka
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  5. N. D. Savchenko
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 28–33, September, 1969.

In conclusion the authors thank professor V. M. Fridkin for interest in the study and for participation in discussion of the results.

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Dovgoshei, N.I., Turyanitsa, I.D., Chepur, D.V. et al. Synthesis technique for and certain properties of AsxSb1-xSI crystals. Soviet Physics Journal 12, 1125–1128 (1972). https://doi.org/10.1007/BF00813420

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  • DOI: https://doi.org/10.1007/BF00813420

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