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Quantenchemische Untersuchung der Elementarprozesse beim Plasmaätzen im System Fluor/Silizium

Quantum chemical investigation of the elementary steps of plasma etching in the system F/Si

  • Anorganische Und Physikalische Chemie
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Summary

Using the cluster model of the silicon (111) surface we derive by means of EHT calculations a mechanism of reactive plasma etching in the system F/Si including diffusion processes. Species SiF2 are found to be the primary etching products at the surface. SiF4 is formed with high probability in the gas phase.

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Literatur

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Authors and Affiliations

  1. Sektion Chemie, Friedrich-Schiller-Universität Jena, DDR-6900, Jena, Germany

    Christian Opitz, Hans Müller & Adnan Kodlaa

Authors
  1. Christian Opitz
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  2. Hans Müller
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  3. Adnan Kodlaa
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Opitz, C., Müller, H. & Kodlaa, A. Quantenchemische Untersuchung der Elementarprozesse beim Plasmaätzen im System Fluor/Silizium. Monatsh Chem 121, 331–338 (1990). https://doi.org/10.1007/BF00809447

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  • DOI: https://doi.org/10.1007/BF00809447

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